News

EETimes reported that IBM and TDK have announced a joint R&D program to bring MRAM memory technology to market. The companies plan to leverage the spin momentum transfer effect in order to shrink memory cells thereby increasing capacity at low cost while maintaining low power, endurance and non-volatility advantages. These properties could make MRAM a preferred technology for automotive, cellphone, handheld computing and industrial controls applications. The project is designed for four years.