Chartered announced the extension of its joint development efforts with IBM to include 32-nm bulk CMOS technology. The joint collaboration has enabled Chartered to accelerate its technology roadmap for leading-edge manufacturing solutions, spanning four major generations of advanced process technology, including 90nm, 65nm, 45nm and 32nm logic processes. As with previous nodes, 32nm development activities will be conducted at IBM’s state-of-the-art 300 mm semiconductor fabrication facility in East Fishkill, N.Y. Each company will have the ability to implement the jointly developed processes in its own manufacturing facilities.

Chartered Semiconductor Manufacturing, one of the world’s top dedicated
foundries, today announced the extension of its joint development efforts with
IBM to include 32- nanometer (nm) bulk complementary metal oxide semiconductor (CMOS)
technology. Financial terms were not disclosed.

The extension to 32nm builds on the multi-year agreement that the two companies
first signed in November 2002. The joint collaboration has enabled Chartered to
accelerate its technology roadmap for leading-edge manufacturing solutions,
spanning four major generations of advanced process technology, including 90nm,
65nm, 45nm and 32nm logic processes.

"Today’s announcement demonstrates IBM and Chartered’s commitment to
next-generation technology, and promises to extend our track record of success
in developing solutions for our customers," said Lisa Su, vice president,
Semiconductor Research and Development Center, IBM. "The combination of
Chartered’s manufacturing horsepower and IBM’s innovation roadmap positions us
well for continued leadership in the future."

"We are pleased to be jointly collaborating on our fourth process generation
with IBM to develop customer-centric solutions," said Liang-Choo "LC" Hsia,
senior vice president, technology development at Chartered. "Since we first
entered into our joint development effort, the industry has recognized the value
and importance of the collaborative model as a cost-effective approach to
accelerating technology development, and the results of our collaboration have
served as a platform for providing customers with world-class, flexible sourcing
solutions."

As with previous nodes, 32nm development activities will be conducted at IBM’s
state-of-the-art 300 millimeter (mm) semiconductor fabrication facility in East
Fishkill, N.Y. Each company will have the ability to implement the jointly
developed processes in its own manufacturing facilities.