IBM and Chartered Semiconductor today expanded their technology alliance, announcing a second-source deal at the 90-nm node. Under the plan, Chartered will manufacture selected 90-nm, silicon-on-insulator (SOI) chip products for IBM. Chartered is expected to begin production of the 90-nm SOI parts in its 300-mm Fab 7 in Singapore by mid-2005. This manufacturing agreement follows the joint development agreements signed by IBM and Chartered in November 2002. Under the initial agreements, the two companies are jointly developing 90- and 65-nm CMOS processes for foundry chip production on 300-mm silicon wafers and are engaged in a reciprocal manufacturing arrangement that provides dual-sourcing flexibility for their customers.

IBM and Chartered Semiconductor today expanded their technology alliance, announcing a second-source deal at the 90-nm node. Under the plan, Chartered will manufacture selected 90-nm, silicon-on-insulator (SOI) chip products for IBM. Chartered is expected to begin production of the 90-nm SOI parts in its 300-mm Fab 7 in Singapore by mid-2005. This manufacturing agreement follows the joint development agreements signed by IBM and Chartered in November 2002. Under the initial agreements, the two companies are jointly developing 90- and 65-nm CMOS processes for foundry chip production on 300-mm silicon wafers and are engaged in a reciprocal manufacturing arrangement that provides dual-sourcing flexibility for their customers.