Home > News > Chartered Upbeat About 45nm Low Power In Late 2007
News

Chartered Upbeat About 45nm Low Power In Late 2007

By the fourth quarter of 2006, Chartered had managed to push its break-even utilization rate down to 70 percent, compared with 75 percent in 2005, while in the midst of a less-than-favorable pricing environment. The CEO cited a range of factors behind the company’s ability to squeeze more revenue out of its factories, including the improved economies of scale brought in by its 12-inch facility, Fab 7, and the fast pace of its ramp at the plant. The company’s efforts to develop a “common platform” with partners IBM Corp. and Samsung were going “very well.” The expected qualification of the companies’ jointly developed 45-nanometer low-power process in late 2007 will be “another big new step in closing the technology gap,” he said.

By the fourth quarter of 2006, Chartered had managed to push its break-even utilization rate down to 70 percent, compared with 75 percent in 2005, while in the midst of a less-than-favorable pricing environment. The CEO cited a range of factors behind the company’s ability to squeeze more revenue out of its factories, including the improved economies of scale brought in by its 12-inch facility, Fab 7, and the fast pace of its ramp at the plant. The company’s efforts to develop a “common platform” with partners IBM Corp. and Samsung were going “very well.” The expected qualification of the companies’ jointly developed 45-nanometer low-power process in late 2007 will be “another big new step in closing the technology gap,” he said.

TeamVR
http://vrzone.com
VR-Zone is a leading online technology news publication reporting on bleeding edge trends in PC and mobile gadgets, with in-depth reviews and commentaries.

Leave a Reply

Your email address will not be published.

Read previous post:
ATi R600 Help Ease IC Substrate Oversupply

The upcoming R600, which is made on 80nm, is helping ease the oversupply of IC substrates, according to a Chinese-language...

Close