Elpida today announced the shipment of 80 nm-based 2 Gigabit DDR2 SDRAM samples. These samples are among the first 80 nm-based devices in the world to be shipped for customer evaluation, and the devices are expected to be used first in high-density memory modules for high performance servers. The 2 Gigabit DDR2 SDRAM devices are available in three different data rate speeds: 533 Mega bits per second (Mbps), 667 Mbps, or 800 Mbps. Elpida’s 2 Gigabit DDR2 SDRAM devices are currently available to customers as samples and volume production will begin in accordance with market demand.

Elpida Memory, Inc. (Elpida), Japan’s leading global supplier of Dynamic
Random Access Memory (DRAM), today announced the shipment of 80 nm-based 2
Gigabit DDR2 SDRAM samples. These samples are among the first 80 nm-based
devices in the world to be shipped for customer evaluation, and the devices are
expected to be used first in high-density memory modules for high performance
servers.

"Inherent in the 80 nm production process technology is the fact that devices
using this process will be even smaller in size, although their density is
greater," said Jun Kitano, director of technical marketing for Elpida Memory
(USA) Inc. "Based on market demand, Elpida intends to use the 80 nm process for
its most advanced DRAM devices at its newly expanded 300 mm wafer manufacturing
facility (the E300 Fab) in Hiroshima, Japan."

Features and Benefits of 2 Gigabit DDR2 SDRAM:
The 2 Gigabit DDR2 SDRAM devices are available in three different data rate
speeds: 533 Mega bits per second (Mbps), 667 Mbps, or 800 Mbps. They are
organized as either 64 M words x 4 bits x 8 banks or as 32 M words x 8 bits x 8
banks. The supply voltage (VDD) is 1.8V+/-0.1V, and the operating temperature
range (Tc) is 0 to 85°C. The devices are available in 68-ball FBGA packages for
easy mounting on Dual In-line Memory Modules (DIMMs).

Availability
Elpida’s 2 Gigabit DDR2 SDRAM devices are currently available to customers as
samples and volume production will begin in accordance with market demand.