4800xdr thumb Elpida Unveiled Fastest DRAM @ 4.8GHz

Elpida and Rambus today introduced the industry’s fastest DRAM, the 512Mb,
4.8GHz XDR™ DRAM, based on Rambus’ XDR memory architecture. With a 9.6GB/s data
transfer rate delivers six times the peak bandwidth of industry-standard
DDR2-800 memory devices. The 4.8GHz XDR device is manufactured using Elpida’s 70
nm process technology and is available in a 104-ball FBGA package. Elpida’s
4.8GHz XDR DRAM is an excellent fit for consumer electronics applications
requiring high bandwidth for 3-D graphics, high-definition image processing, and
advanced multimedia. Elpida’s 512Mb 4.8GHz XDR DRAM devices
will be available for sampling in December 2007. Volume production is expected
to begin in April 2008.

4800xdr Elpida Unveiled Fastest DRAM @ 4.8GHz

Elpida Memory, Inc. (Elpida) (Tokyo Stock Exchange Code 6665), Japan’s
leading global supplier of Dynamic Random Access Memory (DRAM) and Rambus Inc. (Nasdaq:
RMBS), one of the world’s premier technology licensing companies specializing in
high-speed chip architectures, today introduced the industry’s fastest DRAM, the
512 Megabit (Mb), 4.8GHz XDR™ DRAM, based on Rambus’ XDR memory architecture.
This latest addition to the XDR DRAM family provides an industry-leading data
transfer rate of 9.6 Gigabytes per second (GB/s) with a single device, making it
an ideal choice for high-performance, high-volume applications such as
high-definition televisions (HDTV), gaming consoles, PCs, servers and
workstations.

"The industry’s demand for memory bandwidth in next-generation products is
growing rapidly as high-definition image data becomes more popular," said
Yoshitaka Kinoshita, officer for the Digital Consumer Division of Elpida Memory,
Inc. "Working with Rambus on XDR DRAM, we can provide the most cost-effective,
high-bandwidth memory solution to our customers."

Elpida’s 512Mb, 4.8GHz XDR DRAM (Part number: EDX5116ADSE-5E-E) device is
organized in 8-banks (x16/x8/x4 programmable), and with a 9.6GB/s data transfer
rate delivers six times the peak bandwidth of industry-standard DDR2-800 memory
devices. The 4.8GHz XDR device is manufactured using Elpida’s 70 nm process
technology and is available in a 104-ball FBGA package. To support both
high-speed and robust data transfer, XDR DRAM utilizes key enabling technologies
built on patented Rambus innovations such as Differential Rambus Signaling Level
(DRSL), which minimizes signal swing and noise; Octal Data Rate (ODR) technology
which transfers eight bits of data on each clock cycle to achieve 4.8GHz
operation with just a 600MHz clock; and FlexPhase™ circuit technology for
precise on-chip data alignment with the clock. The 512Mb XDR DRAM device also
features adaptive impedance matching, dynamic request scheduling and zero
overhead refresh.

"Elpida’s 4.8GHz XDR DRAM is an excellent fit for consumer electronics
applications requiring high bandwidth for 3-D graphics, high-definition image
processing, and advanced multimedia," said Sharon Holt, senior vice president of
worldwide sales, licensing and marketing at Rambus. "Elpida is well established
as a leading XDR DRAM supplier and we are proud to work with them to advance the
roadmap for XDR to 4.8GHz, achieving the world’s fastest DRAM."

XDR DRAM is an integral part of the XDR memory architecture, working seamlessly
with the XDR Memory Controller (XMC), XDR IO controller interface cell (XIO),
and the XDR Clock Generator (XCG) to enable unprecedented levels of memory
performance while utilizing the fewest number of ICs. A single XDR DRAM device
operating in x16 mode achieves a data transfer rate of 9.6GB/s. In comparison,
it requires six DDR2-800 x16 devices to achieve an equivalent data rate.

Proven in high-volume applications, Rambus XDR memory solutions are backed by
comprehensive engineering support services that range from chip design to system
integration. XDR DRAM continues to provide an order of magnitude higher
performance than today’s standard memories. For more information on the XDR
memory architecture, as well as the next-generation XDR2 DRAM with
micro-threading, please visit www.rambus.com/xdr.

Availability
Elpida’s 512Mb 4.8GHz XDR DRAM devices (Part number: EDX5116ADSE-5E-E) will be
available for sampling in December 2007. Volume production is expected to begin
in April 2008. A datasheet is available upon request.