Hynix has developed DRAM industry’s first 512MB DDR2-800 UDIMMs and has received validation from ASUS. The 512MB and 1GB UDIMMs are based on the Hynix 512-megabit DDR2-800 SDRAM device that is manufactured with cutting-edge 90-nanometer design rule and operates on low 1.8 volt electricity. Hynix stacked eight 512MB DDR2 DRAM chips for 512MB module package and 16 chips for 1GB module package. The chip package is designed for end-users who want to overclock their systems. By obtaining license from the world’s leading motherboard supplier, Hynix expects its DDR2 SDRAM sales will surge in the latter half and gain an edge in competing with rival memory chipmakers in the high-speed, high-capacity DDR module market.

Hynix has developed DRAM industry’s first 512MB DDR2-800 UDIMMs and has received validation from ASUS. The 512MB and 1GB UDIMMs are based on the Hynix 512-megabit DDR2-800 SDRAM device that is manufactured with cutting-edge 90-nanometer design rule and operates on low 1.8 volt electricity. Hynix stacked eight 512MB DDR2 DRAM chips for 512MB module package and 16 chips for 1GB module package. The chip package is designed for end-users who want to overclock their systems. By obtaining license from the world’s leading motherboard supplier, Hynix expects its DDR2 SDRAM sales will surge in the latter half and gain an edge in competing with rival memory chipmakers in the high-speed, high-capacity DDR module market.