EETimes
reported that IBM and TDK have announced a joint R&D program to
bring MRAM memory technology to market. The companies plan to leverage the spin
momentum transfer effect in order to shrink memory cells thereby increasing
capacity at low cost while maintaining low power, endurance and non-volatility
advantages. These properties could make MRAM a preferred technology for
automotive, cellphone, handheld computing and industrial controls applications.
The project is designed for four years.


EETimes
reported that IBM and TDK have announced a joint R&D program to
bring MRAM memory technology to market. The companies plan to leverage the spin
momentum transfer effect in order to shrink memory cells thereby increasing
capacity at low cost while maintaining low power, endurance and non-volatility
advantages. These properties could make MRAM a preferred technology for
automotive, cellphone, handheld computing and industrial controls applications.
The project is designed for four years.