Intel is researching tri-grate transistors, carbon nanotubes, silicon nanowires, III-V-based chips, spintronics, phase change logic devices, interference devices, and optical switches. The research is part of a major effort by Intel to look beyond 2013, when traditional bulk silicon is expected to run out of gas and will no longer scale. Intel believes that there will be some limitations for bulk silicon at the 22-nm node and beyond. In the 2013 to 2019 time frame, Intel said that carbon nanotubes, silicon nanowires, and III-V-based devices may appear in the industry.

On its roadmap, Intel shows the tri-gate transistor appearing at the 45-, 32-, and 22-nm nodes, which are expected to occur in 2007, 2009, and 2011, respectively. Tri-gate transistors will utilize a range of technologies, including high-k dielectric materials and metal gates. Intel is also researching carbon nanotube devices and interconnects, based on the technology. Carbon nanotubes are rolled up graphene sheets, which determine the electronic properties in the device. The dimensions are said to be 1-to-25-nm, depending on how they are formed. In the 2020 time frame and beyond, Intel is investigating spintronics, phase change logic devices, interference devices, and optical switches.

Intel is researching tri-grate transistors, carbon nanotubes, silicon nanowires, III-V-based chips, spintronics, phase change logic devices, interference devices, and optical switches. The research is part of a major effort by Intel to look beyond 2013, when traditional bulk silicon is expected to run out of gas and will no longer scale. Intel believes that there will be some limitations for bulk silicon at the 22-nm node and beyond. In the 2013 to 2019 time frame, Intel said that carbon nanotubes, silicon nanowires, and III-V-based devices may appear in the industry.

On its roadmap, Intel shows the tri-gate transistor appearing at the 45-, 32-, and 22-nm nodes, which are expected to occur in 2007, 2009, and 2011, respectively. Tri-gate transistors will utilize a range of technologies, including high-k dielectric materials and metal gates. Intel is also researching carbon nanotube devices and interconnects, based on the technology. Carbon nanotubes are rolled up graphene sheets, which determine the electronic properties in the device. The dimensions are said to be 1-to-25-nm, depending on how they are formed. In the 2020 time frame and beyond, Intel is investigating spintronics, phase change logic devices, interference devices, and optical switches.