Intel disclosed more details about its 45-nm process, saying it has implemented high-k dielectrics and metal gates for the technology. Intel claims to be one of the first chip makers to implement the new materials in its process technology. Using an undisclosed thick hafnium-based material for its high-k films in gate-stack applications, Intel claims that it is able to boost overall performance and reduce transistor leakage by more than 10 times over current silicon dioxide technology. Intel’s 45-nm process, dubbed P1266, is said to incorporate copper interconnects, low-k dielectrics, strained silicon and other features. Intel disclosed that it will use a new material with a property called high-k, for the transistor gate dielectric, and a new combination of metal materials for the transistor gate electrode.

Intel disclosed more details about its 45-nm process, saying it has implemented high-k dielectrics and metal gates for the technology. Intel claims to be one of the first chip makers to implement the new materials in its process technology. Using an undisclosed thick hafnium-based material for its high-k films in gate-stack applications, Intel claims that it is able to boost overall performance and reduce transistor leakage by more than 10 times over current silicon dioxide technology. Intel’s 45-nm process, dubbed P1266, is said to incorporate copper interconnects, low-k dielectrics, strained silicon and other features. Intel disclosed that it will use a new material with a property called high-k, for the transistor gate dielectric, and a new combination of metal materials for the transistor gate electrode.