Micron Samples 1Gb Mobile DRAM

Micron introduced a new 1 Gigabit (Gb) Mobile DRAM for popular high-end, feature rich mobile phones with multimedia and computing features. The company will bundle the new 1 Gb Mobile DRAM with 1, 2 and 4 Gb density NAND flash memory, creating a powerful memory combination. Designed on the 78-nanometer process technology, Micron’s new 1 Gb chip joins a family of Mobile DRAM products ranging from 64 Megabit (Mb) to 512 Mb. Micron will begin sampling the 1 Gb Mobile DRAM to strategic customers this month, with mass production expected in the third quarter. Additionally, Micron will begin sampling the 1 Gb Mobile DRAM and 1 Gb NAND MCP in the second quarter 2007 and will begin sampling the 2 and 4 Gb NAND MCPs in summer 2007.

At the 3GSM World Congress today, Micron Technology, Inc., (NYSE:MU – News),
introduced a new 1 Gigabit (Gb) Mobile DRAM for popular high-end, feature rich
mobile phones with multimedia and computing features. The company will bundle
the new 1 Gb Mobile DRAM with 1, 2 and 4 Gb density NAND flash memory, creating
a powerful memory combination. The bundled Mobile DRAM and NAND package,
commonly referred to as a multichip package (MCP), consumes less real estate in
mobile phones, providing extra space to design in more features or create a
sleeker, slimmer product.

“As the mobile phone market continues to offer more content such as music,
pictures and video, there is a critical need for more compact memory storage
solutions,” said Brian Shirley, vice president of Micron’s memory group. “Micron
continues to innovate and execute by introducing new memory designs, evident
today with our new 1 Gigabit Mobile DRAM chip. And by combining our new chip
with various NAND densities, it distinguishes us from the competition and
provides our customers with a compact memory solution for high-density data
storage applications.”

Designed on the 78-nanometer process technology, Micron’s new 1 Gb chip joins a
family of Mobile DRAM products ranging from 64 Megabit (Mb) to 512 Mb. Micron’s
Mobile DRAM products feature the company’s exclusive Endur-IC(TM) technology,
which leverages advanced stacked processes and a combination of other unique
design methodologies to deliver low power, high quality, high reliability and
overall greater performance to wireless, handheld products.

As the intersection of computing, mobile and camera capabilities continues to
drive the development of exciting new portable products, Micron provides
customers with a complete solution for their design requirements, including
Mobile DRAM, CellularRAM(TM) memory, NAND Flash, and DigitalClarity(TM) CMOS
image sensors. For more information on Micron’s portfolio of mobile products,
visit http://www.micron.com/applications/mobile/.

Micron is showcasing its mobile memory portfolio at the 3GSM World Congress,
held this week in Barcelona, Spain. A variety of Micron image sensor and mobile
memory product demonstrations will take place at its booth on the exhibit floor
in hall one, space 1H21.

Availability

Micron will begin sampling the 1 Gb Mobile DRAM to strategic customers this
month, with mass production expected in the third quarter. Additionally, Micron
will begin sampling the 1 Gb Mobile DRAM and 1 Gb NAND MCP in the second quarter
2007 and will begin sampling the 2 and 4 Gb NAND MCPs in summer 2007.

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