NEC announced that it has developed a new Advanced Memory Buffer (AMB) device
for use in fully buffered dual-inline memory modules (FB-DIMMs). Developed in
collaboration with Intel and fully compliant with the AMB standard ratified by
JEDEC, the AMB is a key enabling technology behind the increased bandwidths and
large memory capacities characteristic of emerging FB-DIMM products. The AMB
device helps bring new levels of memory performance to demanding applications
such as servers, routers and graphics controllers.


NEC announced that it has developed a new Advanced Memory Buffer (AMB) device
for use in fully buffered dual-inline memory modules (FB-DIMMs). Developed in
collaboration with Intel and fully compliant with the AMB standard ratified by
JEDEC, the AMB is a key enabling technology behind the increased bandwidths and
large memory capacities characteristic of emerging FB-DIMM products. The AMB
device helps bring new levels of memory performance to demanding applications
such as servers, routers and graphics controllers.

The AMB interface is responsible for handling FB-DIMM channel and memory
requests to and from the local DIMM and for forwarding the requests to other
DIMMs. Compared to existing registered DIMM technology, FB-DIMMs provide memory
capacities up to 24 times higher — 192GB vs. 8GB — and bandwidth up to four
times faster — 40GB/s vs. 10GB/s — when used with 1Gb x 4-bit DDRII-800 DRAM.
FB-DIMM technology also uses low-signal pins and only 69 pins per channel,
whereas existing DIMMs need 240 pins per channel.

 

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