New NAND Flash Could Store 1250 DVD Films

A team of Korean scientists has developed the world’s first 8nm non-volatile flash memory unit cell that could one day be built into a semiconductor chip. The creation of the new flash memory was possible by the merging of nanowires with silicon-oxide-nitride-oxide-silicon technology. A fully developed tera-level NAND flash memory can hold 500,000 audio songs in an MP3 file format or record 1,250 DVD films and 1 million high resolution photos within a space equal to that of a person’s fingernail. It would probably take up to 10 years before this technology can be used to make fully operational chips. Once a unit cell is created, it is used to create an array which in turn is made into a computer chip.

A team of Korean scientists has developed the world’s first 8nm non-volatile
flash memory unit cell that could one day be built into a semiconductor chip.
The creation of the new flash memory was possible by the merging of nanowires
with silicon-oxide-nitride-oxide-silicon technology. Researchers at the
state-run institute said they developed the three-dimensional, terabit flash
memory unit cell by successively placing layers of oxide, nitride and oxide
(ONO) on top of the silicon nano-wires that act as conduits for electrons in the
flash memory.

A fully developed tera-level NAND flash memory can hold 500,000 audio
songs
in an MP3 file format or record 1,250 DVD films and 1
million high resolution photos
within a space equal to that of a person’s
fingernail. It would probably take up to 10 years before this technology can be
used to make fully operational chips. Once a unit cell is created, it is used to
create an array which in turn is made into a computer chip.Besides its high
intensity, the new component, when fully developed into a working part, will be
able to reduce memory-related interference from nearby components of electronic
devices.

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