With quad-channel Sandy Bridge E on the horizon, triple-channel kits might soon be a thing of the past. Nevertheless, we decided to have a quick overclocking session with Kingston's HyperX T1 DDR3 triple-channel kit.
Dual-channel memory has been the norm for several years now. Only in 2009 did Intel introduce triple-channel DDR3 on its high-end LGA1366 platform. Even then, only the hexa-core i7 processors could fully utilize all that bandwidth (and only under certain workloads).
Intel plans to take this further with their upcoming X79 platform, which is widely rumored to use quad-channel memory. While that will probably kill off the oddity of having triple-channel memory kits, we thought it worthwhile to spend some time overclocking this set of HyperX memory that landed on our doorstep.
The following specifications are from Kingston's website.
Model number: KHX1600C9D3T1BK3/12GX
- JEDEC standard 1.5V ± 0.075V Power Supply
- VDDQ = 1.5V ± 0.075V
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 5,6,7,8,9,10
- Posted CAS
- Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
- Programmable CAS Write Latency(CWL) = 7(DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4
- which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB : Height 2.401” (61.00mm) w/ heatsink, double sided component