Samsung has developed the first all-DRAM stacked memory package using ‘through silicon via’ (TSV) technology, which will soon result in memory packages that are faster, smaller and consume less power. The new wafer-level-processed stacked package (WSP) consists of four 512Mb DDR2 DRAM chips that offer a combined 2Gb of high density memory. Using the TSV-processed 2Gb DRAMs, Samsung can create a 4 GB DIMM based on advanced WSP technology for the first time. Samsung’s proprietary WSP technology not only reduces the overall package size, but also permits the chips to operate faster and use less power.
Samsung Electronics Co., Ltd., the world leader in advanced semiconductor
technology solutions, today announced that it has developed the first all-DRAM
stacked memory package using ‘through silicon via’ (TSV) technology, which will
soon result in memory packages that are faster, smaller and consume less power.
The new wafer-level-processed stacked package (WSP) consists of four 512 megabit
(Mb) DDR2 (second generation, double data rate) DRAM (dynamic random access
memory) chips that offer a combined 2 gigabits (Gb) of high density memory.
Using the TSV-processed 2Gb DRAMs, Samsung can create a 4 GB (gigabyte) DIMM
(dual in-line memory module) based on advanced WSP technology for the first
time. Samsung’s proprietary WSP technology not only reduces the overall package
size, but also permits the chips to operate faster and use less power.
“The innovative TSV-based MCP (multi-chip package) stacking technology offers
next-generation packaging solution that will accommodate the ever-growing demand
for smaller-sized, high-speed, high-density memory,” said Tae-Gyeong Chung, vice
president, Interconnect Technology Development Team, Memory Division, Samsung
Electronics. “In addition, the performance advancements achieved by our WSP
technology can be utilized in many diverse combinations of semiconductor
packaging, such as system-in-package solutions that combine logic with memory.
In today’s MCPs, memory chips are connected by wire bonding, requiring vertical
spacing between dies that is tens of microns deep. That wire bonding process
also requires horizontal spacing on the package board hundreds of microns wide
for the die-connecting wires. By contrast, Samsung’s WSP technology forms
laser-cut micron-sized holes that penetrate the silicon vertically to connect
the memory circuits directly with a copper (Cu) filling, eliminating the need
for gaps of extra space and wires protruding beyond the sides of the dies. These
advantages permit Samsung’s WSP to offer a significantly smaller footprint and
Inside the new WSP, the TSV is housed within an aluminum (Al) pad to escape the
performance-slow-down effect caused by the redistribution layer. Due to the
complexity of DRAM stacking, this represented a much more difficult engineering
feat than that accomplished with the first WSP, announced last year involving
NAND flash dies.
There has been considerable concern that MCPs with high-speed memory chips with
speed of 1.6Gb/ps next generation DRAM, would suffer from performance
limitations when connected using current technologies. Samsung’s WSP technology
resolves these concerns.
In addition, as the back side of the wafer is ground away to make a thinner
stack of multiple dies, the wafer has had a tendency to curve, creating physical
distortion in the die. To overcome this additional critical concern in designing
low-profile, high-density MCPs containing DRAM circuitry, Samsung’s proprietary
wafer-thinning technology, announced last year, has been applied to improve the
Advanced package solutions are increasingly important requirements for enabling
high-speed, high-density memory solutions. Samsung’s new stacked package design
supports the rapid industry demand for high density, high performance
semiconductor solutions that will support next-generation computing systems in
2010 and beyond.