Samsung 50nm DDR2 DRAM

Samsung has developed the industry’s first 50nm DDR2 DRAM chip, which will increase production efficiency from the 60nm level by 55%. The new 1Gbit DRAM incorporates advanced technologies such as three-dimensional (3D) transistor design and multi-layered dielectric technology, which greatly enhance performance and data storage capabilities. Samsung’s new 50nm process technology can be applied to a broad range of DRAM chips including graphics and mobile DRAM. With mass production slated for 2008, the 50nm DRAM chip is well positioned to become the mainstay of a DRAM market that is expected to account for US$ 55 billion by 2011.


Samsung has developed the industry’s first 50nm DDR2 DRAM chip, which will increase production efficiency from the 60nm level by 55%. The new 1Gbit DRAM incorporates advanced technologies such as three-dimensional (3D) transistor design and multi-layered dielectric technology, which greatly enhance performance and data storage capabilities. Samsung’s new 50nm process technology can be applied to a broad range of DRAM chips including graphics and mobile DRAM. With mass production slated for 2008, the 50nm DRAM chip is well positioned to become the mainstay of a DRAM market that is expected to account for US$ 55 billion by 2011.

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