Samsung has developed what it calls the industry’s first 1Gbit mobile DRAM for mobile products, using 80nm process technology and plans to mass produce the new device in the second quarter of 2007. The new chip, also known as low-power DDR or synchronous DRAM, will be more cost effective than other high density mobile solutions and used for a wide range of advanced handset applications as well as for digital cameras, portable media players and portable gaming products. This monolithic 1Gbit mobile DRAM is a highly competitive choice for mobile applications over the double-die stack, 1Gb memory solution widely used today, as the electric current in the new chip drops a full 30%.

Samsung has developed what it calls the industry’s first 1Gbit mobile DRAM
for mobile products, using 80nm process technology and plans to mass produce the
new device in the second quarter of 2007. The new chip, also known as low-power
DDR or synchronous DRAM, will be more cost effective than other high density
mobile solutions and used for a wide range of advanced handset applications as
well as for digital cameras, portable media players and portable gaming
products. This monolithic 1Gbit mobile DRAM is a highly competitive choice for
mobile applications over the double-die stack, 1Gb memory solution widely used
today, as the electric current in the new chip drops a full 30%.

Although this new 1Gbit mobile DRAM chip uses the same packaging technique as
the 512Mbit double-die stack 1Gbit package, Samsung introduces a new
temperature-sensing feature in this solution resulting in a reduction of power
drain in standby mode by 30% over conventional memory chip designs, claims the
company. In terms of size, Samsung said the new 1Gbit mobile DRAM chip is at
least 20% thinner than a multi-stack package of 512Mbit dies, allowing a single
high-density package solution of 1.5Gbit or even 2Gbit mobile DRAM memory.
Samsung also offers 1Gbit mobile DRAM with flash memory in multi-chip packaging
(MCP).