Samsung today announced the industry’s first 2Gb DDR2 SDRAM utilizing 80nm process technology. The high density, DDR2 solution will enhance server and workstation performance and enable faster deployment of memory intensive applications like real time video conference, remote medical service, two-way communications, and 3-D graphics. Samsung developed the DDR2 SDRAM using an advanced 80nm process technology, overcoming the industry expectations that 2Gb DRAM manufacture would require sub 65nm circuitry. Samsung plans to launch mass production of the 80nm process, 2Gb DDR2 SDRAM in the second half of 2005. The 2Gb DDR2 devices meet fine-pitch ball grid array (FBGA) package specifications for DDR2. Even without modifications, the devices can directly drive module density levels of Gigabyte (GB) scale; 2GB, 4GB and 8GB.

Samsung today announced the industry’s first 2-Gigabit (Gb) DDR2 SDRAM
utilizing 80-nanometer (nm) process technology. T he high density, DDR2 solution
will enhance server and workstation performance and enable faster deployment of
memory intensive applications like real time video conference, remote medical
service, two-way communications, and 3-D graphics.

Samsung developed the DDR2 SDRAM using an advanced 80nm process technology,
overcoming the industry expectations that 2Gb DRAM manufacture would require sub
65nm circuitry. The new DRAM technology breakthroughs include a 3-D transistor
technology, recess channel array transistor (RCAT), and a new concept
architecture process. First introduced 2003, RCAT is a technology unique to
Samsung that reduces transistor area space by implementing a 3-D structural
design, increasing the integration level for higher density on a given area.

To address the high performance features of the DDR2 specification, Samsung
adopted a double poly gate technology, 20-angstrom level ultra thin oxide film
process, and a triple-layer metal circuitry. The high speed process technology
coupled with the feasible 80nm technology also advances the time-to-market
availability of the new DDR2 device.

Market research firm, Gartner Dataquest forecasts that DDR2 technology’s market
share will grow from 11 percent this year to 50 percent by year-end 2005, making
DDR2 the mainstream DRAM product.  The company expects aggregate sales of
DDR2 to reach 15million units in September and will continue to dedicate more of
its DDR production to the high performance technology aiming for DDR2 to
comprise 32% of its DDR business by years’ end

Samsung plans to launch mass production of the 80nm process, 2Gb DDR2 SDRAM in
the second half of 2005. The 2Gb DDR2 devices meet fine-pitch ball grid array (FBGA)
package specifications for DDR2. Even without modifications, the devices can
directly drive module density levels of Gigabyte (GB) scale; 2GB, 4GB and 8GB.