Samsung is now sampling its 16-gigabit (Gb) NAND flash memory with customers – the first NAND flash using 50nm process technology. Early market introduction of 16Gb and higher density NAND flash memories is expected to accelerate the adoption of non-volatile memory applications such as flash-based solid state disks. Samsung plans to begin mass producing its 16Gb NAND flash memory in the first quarter of 2007.

20070103img l Samsung Samples 16Gb Flash Memory

Samsung is now sampling its 16-gigabit (Gb) NAND flash memory with customers
– the first NAND flash using 50nm process technology. The first samples of this
high density NAND flash memory have a multi-level cell (MLC) design with a
4Kbyte (KB) page size to enhance both its read and write features. The new 4KB
page function improves the conventional 2KB paging system for MLC NAND flash to
double the read speed, while increasing write performance 150%.

By nearly doubling the overall performance of Samsung’s MLC NAND, mobile
consumers will enjoy faster data transfer speeds when storing or reading large
data files whether they’re using an external memory card, or a handset with a
built-in flash solution such as Samsung’s moviNAND TM. Early market introduction
of 16Gb and higher density NAND flash memories is expected to accelerate the
adoption of non-volatile memory applications such as flash-based solid state
disks.

Samsung plans to begin mass producing its 16Gb NAND flash memory in the first
quarter of 2007.