SK Hynix’s high-capacity DDR4 modules are based on Through Silicon Via (TSV) technology.
DDR4 capable motherboards and CPUs aren’t yet on the market, but that hasn’t stopped SK Hynix from putting some serious work into making high capacity DDR4 modules. On Tuesday the South Korean semiconductor supplier unveiled the first 128GB DDR4 memory module, which is based upon the company’s 8Gb memory chips built on the 20nm process node.
“The development of the world’s first 128GB DDR4 module has its significance in opening ultrahigh density server market” said Sung Joo Hong, the head of DRAM development at SK Hynix in s statement.. “The company will further strengthen its competitiveness in premium DRAM sphere with the development of high density, ultrahigh speed and low power consuming products.”
SK Hynix is using TSV (Through Silicon Via) technology — a manufacturing method for passing electrical connections vertically through a silicon die — in its new DDR4 module, which means it has double the density of previous memory modules.This new DDR4-based memory module runs at 2133Mbps and will be able to process data at 17GB per-second over its 64-bit wide bus. It will have power requirement of 1.2V, where DDR3 requires 1.5V.
Mass production of this new 128GB DDR4 RAM module is expected to begin by the first half of 2015. Of course there’s not much practical use for it in the consumer or enthusiast space, as not many motherboards on the market will support over 32GB of RAM.
Source: SK Hynix