AMD has signed a technology license for “floating-body” silicon-on-insulator (SOI) memory developed by Innovative Silicon Inc. AMD is interested in the Z-RAM (zero capacitor) technology for use in its microprocessors. ISi has claimed that Z-RAM can achieve five times the density of embedded SRAM, the conventional memory choice for on-chip caches, and twice the density of embedded DRAM. It could also provide a means to help AMD put distance between itself and Intel. The dramatic increase in density offered by ISi’s Z-RAM embedded memory can enable much larger on-chip microprocessor cache memories resulting in improved performance and reduced I/O power consumption. Test vehicles would probably run on 65nm and 90nm manufacturing processes initially and the wafers would run at AMD’s Dresden, Germany wafer fabs.

AMD has signed a technology license for “floating-body” silicon-on-insulator (SOI) memory developed by Innovative Silicon Inc. AMD is interested in the Z-RAM (zero capacitor) technology for use in its microprocessors. ISi has claimed that Z-RAM can achieve five times the density of embedded SRAM, the conventional memory choice for on-chip caches, and twice the density of embedded DRAM. It could also provide a means to help AMD put distance between itself and Intel. The dramatic increase in density offered by ISi’s Z-RAM embedded memory can enable much larger on-chip microprocessor cache memories resulting in improved performance and reduced I/O power consumption. Test vehicles would probably run on 65nm and 90nm manufacturing processes initially and the wafers would run at AMD’s Dresden, Germany wafer fabs.