Toshiba & Samsung Advanced Chip Development

Toshiba and Samsung have both unveiled progress they are making in independent research projects aimed at realizing chips that are two generations down the line from today’s most advanced semiconductors. The work is targeting chips which have features as small as 45 nanometers across. The first of Toshiba’s announcements detailed development of a high performance MOSFET. The transistor uses a new gate-oxide technology to combat current leakage, which is expected to become more of a problem in future chips because they use less power. It has developed a multi-layer wiring technology suitable for use in chips made with a 45-nanometer process. Samsung had developed a three-dimensional transistor process technology for 50-nanometer production.


Toshiba and Samsung have both unveiled progress they are making in independent research projects aimed at realizing chips that are two generations down the line from today’s most advanced semiconductors. The work is targeting chips which have features as small as 45 nanometers across. The first of Toshiba’s announcements detailed development of a high performance MOSFET. The transistor uses a new gate-oxide technology to combat current leakage, which is expected to become more of a problem in future chips because they use less power. It has developed a multi-layer wiring technology suitable for use in chips made with a 45-nanometer process. Samsung had developed a three-dimensional transistor process technology for 50-nanometer production.

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