Both manufacturers will be offering memory modules that offer better data transmission rates from later this year.
Toshiba and SanDisk announced today that they are utilizing a 15 nm manufacturing process for NAND memory. Toshiba has mentioned that the new manufacturing process will be used in a new 128-gigabit (16 GB) flash memory module that uses two bits per cell. The shift to 15 nm allows Toshiba to use a high speed interface, which the manufacturer claims increase the data transfer to 533 mbit/sec, which is 1.3 times faster than the transfer rate achieved by the 19 nm memory modules.
Toshiba said that its Yokkaichi plant in Mie Prefecture near Osaka will be handling production of the 15 nm NAND modules. Toshiba is also going to introduce modules with three bits per cell initially in smartphones and tablets, and later in notebook SSDs.
SanDisk also announced that it is utilizing a 15 nm process, which it calls a 1Z-nm node. SanDisk is similarly looking to build NAND memory modules that feature two bits per cell and three bits per cell in the second half of 2014, and has stated that its modules will be featured in removable drives as well as SSDs. Dr. Siva Sivaram, senior vice president, memory technology, SanDisk said that the shift to 15 nm allowed SanDisk to manufacture cost effective NAND modules when seen against the last generation 1Y-nm nodes. “We are thrilled to continue our technology leadership with the industry’s most advanced flash memory process node, enabling us to deliver the world’s smallest and most cost effective 128 gigabit chips.”