Transmeta today announced that Transmeta’s advanced LongRun2(TM) technologies for power management and transistor leakage control have been licensed to Fujitsu Limited. Fujitsu will utilize Transmeta’s LongRun2 technologies for use in Fujitsu’s current and future generation semiconductor products. LongRun2 technologies build upon Transmeta’s first generation LongRun® power management technology, which pioneered the dynamic adjustment of MHz and voltage, hundreds of times per second, to reduce power consumption. Transmeta’s Efficeon TM8800, which recently began initial production, is manufactured in a state-of-the-art 90nm CMOS process technology at Fujitsu’s Electronic Devices Business Group’s Akiruno Technology Center in west Tokyo. By using this advanced process technology, the initial 90nm TM8800 shipments feature clock speeds of up to 1.6GHz while maintaining low power operation. The first versions of the LongRun2-enhanced TM8800 are expected to sample later this year, featuring further reductions in active and standby power.

Transmeta today announced that Transmeta’s advanced LongRun2(TM) technologies
for power management and transistor leakage control have been licensed to
Fujitsu Limited. Fujitsu will utilize Transmeta’s LongRun2 technologies for use
in Fujitsu’s current and future generation semiconductor products.

Transmeta’s LongRun2 technologies address the problems of excessive chip heat
and transistor leakage, which pervade the semiconductor industry and are
expected to get progressively worse as successive manufacturing technologies
scale down to smaller dimensions. Transmeta’s advanced LongRun2 technologies are
expected to improve semiconductor devices by reducing total chip power, reducing
standby power, reducing burn-in power, and potentially improving chip
performance and reducing manufacturing costs. LongRun2 technologies build upon
Transmeta’s first generation LongRun® power management technology, which
pioneered the dynamic adjustment of MHz and voltage, hundreds of times per
second, to reduce power consumption. LongRun2 technologies extend this approach
by dynamically adjusting transistor threshold voltages to control transistor
leakage. This dynamic control reduces leakage caused by changes in runtime
conditions, such as voltage and temperature, which are not predetermined when
the chip is manufactured.

"Fujitsu has achieved a performance leadership position with its 90nm CMOS
technology node, featuring an industry leading transistor with a 40nm gate
length. In reaching for even smaller transistor geometries, Fujitsu saw that
transistor leakage would become a critical issue to solve," said Matthew R.
Perry, president and chief executive officer of Transmeta. "We’re pleased that
Fujitsu recognizes Transmeta’s LongRun2 Technologies as having advanced new
approaches to attacking the transistor leakage problem in order to achieve
greater power efficiency."

"Transmeta is well known for its focus on Efficient Computing," said
Toshihiko Ono, group president of Fujitsu Limited’s Electronic Devices Business
Group. "By working closely together with Transmeta, we expect to combine the
capabilities of our high performance technologies and their low-power expertise
for the benefit of our ASIC, CPU and foundry customers."

"Transmeta’s LongRun2 technologies are a major practical innovation designed
to address the leakage problem facing the industry and will enable continued
scaling of semiconductors to smaller geometries," said Bijan Moslehi, Ph.D.,
chief technology officer of The Noblemen Group and senior vice president of the
Noblemen Semiconductor Technology Research Division. "The implementation of
these ground-breaking technologies will benefit licensees by increasing
semiconductor performance, providing better yields and ultimately driving down
manufacturing costs in the future."

Transmeta’s Efficeon TM8800, which recently began initial production, is
manufactured in a state-of-the-art 90nm CMOS process technology at Fujitsu’s
Electronic Devices Business Group’s Akiruno Technology Center in west Tokyo. By
using this advanced process technology, the initial 90nm TM8800 shipments
feature clock speeds of up to 1.6GHz while maintaining low power operation. The
first versions of the LongRun2-enhanced TM8800 are expected to sample later this
year, featuring further reductions in active and standby power.